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? ? ? ? ? ? ? ,7 ? ? ? ? ,7 ? ? ? ? fuji power mosfet superfap-g series target specification preliminary 1) package to-220 2) absolute maximum ratings (tc=25 ???@ unless otherwise specified) items units drain-source voltage v continuous drain current a pulsed drain current a gate-source voltage v a non-repetitive maximum avalanche ener gy mj *1 maximum drain-source dv/dt dv ds /dt kv/us peak diode recovery dv/dt dv/dt kv/us *2 w w operating and storage ? temperature range ? 3)electrical characteristics (tch=25 ?? unless otherwise specified) items symbols test conditions min. typ. max. units drain-source breakdown voltage bv dss i d =250ua v gs =0v 800 --- --- v gate threshold voltage v gs (th) i d =250ua v ds =v gs 3.0 --- 5.0 v v ds =800v t ch =25 ? --- --- 50 ? a v gs =0v t ch =125 ? --- --- 500 ? a gate-source leakage current i gss v gs =30v v ds =0v --- --- 100 na input capacitance c iss v ds =25v --- 830 --- output capacitance c oss v gs =0v --- 100 --- pf reverse transfer capacitance c rss f=1mhz --- 5 --- total gate char g eq g vcc=400v --- 25 --- gate to source charge qgs i d =7a --- 7.5 --- nc gate to drain (miller) charge qgd v gs =10v --- 7 --- avalanche capab ility i av l=8.80mh tch=25 ? 7 --- --- a diode forward on-voltage v sd i f =7a,vgs=0v,tch=25 ?? --- 1.0 1.5 v 4) thermal characteristics items symbols test conditions min. typ. max. units channel to case rth ( ch-c ) 0.64 ? /w channel to ambient rth(ch-a) 62.0 ? /w *1 l=8.80mh,vcc=80v *2 i f -i d ,-di/dt=50a/ bv dss ,tch 150 c repetitive and non-repetitive maximum avalanche current zero gate voltage drain current drain-source on-state resistance vgs=10v t ch t stg maximum power dissipation p d @ta=25 ?? p d ?@???s c=25 ?? --- i dss r ds (on) i d =3.5a ?? --- 1.9 235.3 20 5 195 2.02 150 -55 ?` +150 ratings 800 7 28 2SK3529-01 (800v/1.9 ? /7a) v gs i ar e as symbols v ds i d i d(pulse) 30 7
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